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(R)
STTA212S
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 2A 1200V 65ns 1.5V
FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they aloso highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations and is particulary ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5s F=5kHz square tp = 10ms sinusoidal Value 1200 1200 10 20 25 - 65 to + 150 125 Unit V V A A A C C suitable and efficient in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizingdiodes secondary of SMPS as high voltage rectifier diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes.
SMC
TURBOSWITCH is a trademark of STMicroelectronics
January 1999 - Ed: 4A
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THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Junction to lead thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 1.5A = 0.5 Tlead= 72C Tlead= 67C Test conditions Value 21 2.5 2.8 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR
**
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test Conditions IF = 2A VR = 0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.1 150
Max 1.65 1.5 20 400 1.15 175
Unit V A V m
Vto rd
Test pulses :
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum recovery current Softness factor Test conditions Tj = 25C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/s VR = 30V Tj = 125C VR = 600V dIF/dt = -16 A/s dIF/dt = -50 A/s Tj = 125C VR = 600V dIF/dt = -50 A/s IF = 2A 3.6 6.0 IF = 2A 0.9 / Min Typ 65 115 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol t fr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 2 A dIF/dt = 16 A/s measured at 1.1 x VFmax Min Typ Max 900 35 Unit ns V
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STTA212S
Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A)
=0.1 =0.2 =0.5
P1(W) 3.0 2.5 2.0 1.5 1.0 0.5 IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5E+1
=1
Tj=125C
1E+1
1E+0
1E-1 VFM(V) 1E-2 0 1 2 3 4 5
Fig. 3: Variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board FR4, e(Cu)=35m, S(Cu)=1cm2).
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
Zth(j-a)(C/W) 100
IRM(A) 20
VR=600V Tj=125C IF=2*IF(av)
15
10
10
IF=IF(av)
5
tp(s) 1 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
dIF/dt(A/ s)
0 0 20 40 60 80 100 120 140 160 180 200
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical values).
Fig. 6: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 400
S factor 1.20
IF<2*IF(av) VR=600V Tj=125C
350 300
VR=600V Tj=125C
1.00
250 200
IF=2*IF(av)
0.80
150
IF=IF(av)
100
dIF/dt(A/ s)
0.60 0 20 40 60 80 100 120 140 160 180 200
50 0 0 20 40 60
dIF/dt(A/ s)
80 100 120 140 160 180 200
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Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt.
1.1
60 50
S factor
VFP(V)
Tj=125C IF=IF(av)
1.0
40
0.9
IRM
30 20
0.8 Tj(C) 0.7 25 50 75 100 125
10 0 0 20
dIF/dt(A/ s)
40 60 80 100
Fig. 9: Forward recovery time versus dIF/dt.
tfr(ns) 800 700 600 500 400 300 200 0 20 dIF/dt(A/ s) 40 60 80 100
VFR=1.1*VF max. IF=IF(av) Tj=125C
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APPLICATION DATA The 1200V TURBOSWITCH has been designed to provide the lowest overall power losses in any all high frequency or high pulsed current operations. In such applications (fig. A to D), the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the transistor due to the diode
Fig. A : "FREEWHEEL" MODE
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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APPLICATION DATA (Cont'd) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM t T = t/T
F = 1/T
Fig. D : RECTIFIER DIODE.
Fig. E : STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 x IF(AV) + Rd x IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR x IR x (1 - )
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APPLICATION DATA (Cont'd) Fig. F : TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x (3 + 2 x S) x F 6 x dIF dt VR x IRM x IL x (S + 2) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dIR /dt VR trr = ta + tb I dI F /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : with non negligible serial inductance P3' =
VR x IRM 2 x S x F L x IRM 2 x F + 6 x dIF dt 2
P3, P3' and P5 are suitable for power MOSFET and IGBT
Fig. G : TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
0 VF V Fp
t
1.1V F 0 tfr
VF t
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PACKAGE MECHANICAL DATA SMC E1 REF. A1 D A2 b c E A1 A2 E2 L FOOTPRINT DIMENSIONS (in millimeters) SMC Plastic b E E1 E2 c D L DIMENSIONS Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063
3.3
2.0
Ordering type STTA212S
4.2
Marking T53
2.0
Package SMC Weight 0.243g Base qty 2500 Delivery mode Tape & reel
Epoxy meets UL94,V0 Band indicates cathode
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 8/8

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